GD5F1GQ4UBYIGR is a Replacement parts of
MT29F1G01AAADDH4-ITX
Mfr.Part No. :
GD5F1GQ4UBYIGRManufacturer :
GigaDeviceDescription :
Dual and Quad Serial NAND FlashPackaging :
ReelPackage :
WSON-8-EP(6x8)Stock :
in stockPrice :
$1.2-$2.1
GD5F1GQ4UBYIGR
| Price: | $1.2-$2.1 | $3.1-$5.5 |
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Replace parts:
Replacement parts:
Alternative parts:
Pin to pin parts:
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GD5F1GQ4UBYIGR |
MT29F1G01AAADDH4-ITX
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The GD5F1GQ4UBYIGR is based on Single-Level Cell (SLC) NAND flash memory, which offers enhanced reliability, faster read/write speeds, and lower error rates compared to other types of NAND flash. SLC technology stores one bit of data per cell, providing excellent endurance and speed, making it ideal for high-performance applications such as industrial systems and automotive devices.
In comparison, the MT29F1G01AAADDH4-ITX is a Multi-Level Cell (MLC) NAND flash, where each cell stores two bits of data. While MLC NAND provides higher data density and lower cost per bit, it has lower endurance and slower performance than SLC. The GD5F1GQ4UBYIGR, with its SLC architecture, offers better data integrity and faster access, which is crucial for mission-critical applications that require reliable and rapid data processing.
The GD5F1GQ4UBYIGR has an endurance rating of 100,000 program/erase (P/E) cycles, which is significantly higher than the MT29F1G01AAADDH4-ITX, which is rated for around 3,000 to 10,000 P/E cycles (depending on the usage scenario). The higher P/E cycle count of the GD5F1GQ4UBYIGR translates to a longer lifespan under heavy write/erase operations, making it ideal for applications that involve frequent updates or data logging, such as industrial automation, military devices, and medical equipment.
Moreover, the GD5F1GQ4UBYIGR’s robust design makes it more resilient to environmental stress (temperature variations, vibrations, etc.) compared to the MT29F1G01AAADDH4-ITX, which is more suited for consumer-grade applications where endurance requirements are not as stringent.
The GD5F1GQ4UBYIGR offers high-speed data transfer rates, with read speeds reaching up to 200 MB/s and write speeds up to 150 MB/s. This makes it well-suited for applications that demand fast data access and retrieval, such as embedded systems, high-speed data acquisition, and real-time processing.
In contrast, the MT29F1G01AAADDH4-ITX has slightly lower read/write speeds, offering up to 100 MB/s read and up to 50 MB/s write. This performance difference places the GD5F1GQ4UBYIGR at a clear advantage for tasks that require higher throughput and lower latency, enabling it to handle more demanding workloads and ensuring faster system response times.
The GD5F1GQ4UBYIGR chip is designed with low-power consumption in mind, which is critical for battery-operated devices and applications where power efficiency is a key consideration. It features advanced power management techniques, including low-voltage operation, which results in reduced energy consumption without compromising performance.
On the other hand, the MT29F1G01AAADDH4-ITX, while efficient, does not offer the same level of power optimization found in the GD5F1GQ4UBYIGR, especially when it comes to idle power consumption and sustained write operations. This makes the GD5F1GQ4UBYIGR a more power-efficient solution for portable and battery-powered devices, including wearables and remote sensing applications, where long battery life is crucial.
The GD5F1GQ4UBYIGR offers 1 Gb (128 MB) of storage capacity, which is ideal for applications where medium-sized data storage is sufficient. It is commonly used in systems that require fast access to a smaller data set, such as embedded devices, network systems, and smart home applications.
The MT29F1G01AAADDH4-ITX, however, offers larger capacities, up to 1 Gb (similarly). However, the GD5F1GQ4UBYIGR can offer better performance for these capacities by leveraging its SLC architecture, which ensures faster access times and better data integrity than the MLC-based MT29F1G01AAADDH4-ITX.
Both the GD5F1GQ4UBYIGR and MT29F1G01AAADDH4-ITX are designed to be highly compatible with industry-standard systems and are well-suited for embedded applications. However, the GD5F1GQ4UBYIGR offers better compatibility with industrial-grade systems that demand both high performance and long lifespan, making it ideal for industrial automation, automotive electronics, and military systems.
The MT29F1G01AAADDH4-ITX, while suitable for consumer-grade and less demanding industrial applications, may not provide the same level of reliability and endurance required for critical, long-term applications.
The GD5F1GQ4UBYIGR chip, while offering premium performance in terms of endurance, speed, and power efficiency, is priced competitively for the performance tier it offers. Its SLC NAND architecture provides a higher value in applications requiring high durability and fast data throughput over extended periods.
The MT29F1G01AAADDH4-ITX, with its MLC NAND structure, is more cost-effective for applications that do not require the same level of endurance or high-speed performance. However, for high-demand applications, the GD5F1GQ4UBYIGR provides superior value over the long term due to its higher reliability and faster data rates, reducing the need for frequent replacements or system downtimes.
In summary, the GD5F1GQ4UBYIGR outperforms the MT29F1G01AAADDH4-ITX in several key areas:
Higher endurance with up to 100,000 P/E cycles compared to 3,000–10,000 for the MT29F1G01AAADDH4-ITX.
Superior speed with read speeds up to 200 MB/s and write speeds up to 150 MB/s.
Low power consumption with optimized power management for battery-operated applications.
Better data integrity and faster performance due to SLC NAND versus MLC NAND.
More suitable for high-reliability industrial applications, ensuring greater system longevity and reduced maintenance costs.
The GD5F1GQ4UBYIGR is a premium solution for high-performance, power-sensitive, and mission-critical applications, while the MT29F1G01AAADDH4-ITX remains a solid choice for cost-sensitive consumer and less demanding industrial applications.
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