GD5F1GQ5REYIGR is a Replacement parts of
TC58CYG0S3HRAIJ
Mfr.Part No. :
GD5F1GQ5REYIGRManufacturer :
GigaDeviceDescription :
Dual and Quad Serial NAND FlashPackaging :
ReelPackage :
WSON-8-EP(6x8)Stock :
in stockPrice :
$1.2-$2.1
GD5F1GQ5REYIGR
| Price: | $1.2-$2.1 | $7.8-$10.5 |
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Replace parts:
Replacement parts:
Alternative parts:
Pin to pin parts:
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GD5F1GQ5REYIGR |
TC58CYG0S3HRAIJ
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The GD5F1GQ5REYIGR uses Single-Level Cell (SLC) NAND technology, which stores one bit per cell. This provides higher reliability, faster data access, and greater endurance. SLC NAND is renowned for its low error rates and its superior write performance, making it ideal for high-performance systems, automotive applications, and industrial-grade devices that require consistent and reliable data integrity over time.
In contrast, the TC58CYG0S3HRAIJ employs Multi-Level Cell (MLC) NAND technology, storing two bits of data per cell. While MLC NAND typically offers higher storage density at a lower cost, it comes at the expense of reduced endurance and slower read/write speeds compared to SLC NAND. MLC NAND is suitable for consumer-grade devices but falls short in environments where high reliability and longevity are critical, such as industrial automation or mission-critical applications.
The GD5F1GQ5REYIGR offers up to 100,000 program/erase (P/E) cycles, significantly outpacing the typical 3,000–5,000 P/E cycles offered by the TC58CYG0S3HRAIJ. This makes the GD5F1GQ5REYIGR a more durable option for applications that undergo frequent write/erase cycles, such as embedded systems, data logging, and industrial equipment.
With its MLC architecture, the TC58CYG0S3HRAIJ has a lower P/E cycle count, which can lead to reduced lifespan under high-stress conditions or heavy data operations. For systems requiring long-term reliability and the ability to sustain high-frequency write/erase cycles, the GD5F1GQ5REYIGR is the more robust choice.
The GD5F1GQ5REYIGR delivers fast read speeds of up to 200 MB/s and write speeds of up to 150 MB/s, ensuring rapid data access and high throughput for high-performance applications. This speed advantage is crucial for systems that rely on real-time data processing, data-intensive tasks, and low-latency operations.
On the other hand, the TC58CYG0S3HRAIJ offers slower read and write speeds, typically reaching 100 MB/s in read operations and 40 MB/s in write operations. These performance levels are sufficient for consumer devices but may not meet the demands of industrial or high-performance systems that require faster data throughput.
The GD5F1GQ5REYIGR is optimized for low power consumption, making it ideal for battery-powered devices and applications where energy efficiency is crucial. With its advanced power management features, it ensures minimal energy consumption without sacrificing performance, offering long battery life and lower operational costs.
While the TC58CYG0S3HRAIJ also offers power efficiency, it does not match the GD5F1GQ5REYIGR in terms of energy optimization. For applications that rely on extended battery life, such as mobile devices or remote sensing systems, the GD5F1GQ5REYIGR offers a distinct advantage.
The GD5F1GQ5REYIGR benefits from the SLC NAND architecture, which provides exceptional data integrity and lower error rates compared to MLC NAND. This makes the GD5F1GQ5REYIGR particularly suited for mission-critical applications in sectors such as medical devices, automotive electronics, and industrial automation, where data corruption or errors are unacceptable.
The TC58CYG0S3HRAIJ, with its MLC NAND, is more susceptible to bit errors and data corruption over time, especially under frequent write/erase cycles. MLC NAND is prone to higher error rates due to its more complex data storage mechanism, making it less suitable for environments that require high data integrity and consistent performance.
The GD5F1GQ5REYIGR is designed to operate in extreme environmental conditions, with an operating temperature range of -40°C to 85°C. This wide temperature range makes it suitable for automotive applications, industrial control systems, and remote sensing devices that need to function reliably in harsh environments, including high and low temperature extremes.
In contrast, the TC58CYG0S3HRAIJ typically operates in a narrower temperature range, generally between 0°C and 70°C. This limitation restricts its use in environments with extreme temperature fluctuations, making the GD5F1GQ5REYIGR a more versatile option for rugged applications that require resilience to temperature variations.
Both the GD5F1GQ5REYIGR and the TC58CYG0S3HRAIJ offer 1Gb (128MB) of storage capacity, which is adequate for many embedded systems and low-to-medium storage applications. However, the GD5F1GQ5REYIGR excels in providing higher endurance, faster performance, and greater reliability, making it the better choice for data-intensive applications.
The TC58CYG0S3HRAIJ, while providing similar storage capacity, falls short in terms of endurance and performance compared to the GD5F1GQ5REYIGR, especially in high-demand environments where consistent and high-speed data access is necessary.
The GD5F1GQ5REYIGR is ideally suited for applications that require high durability, high-speed performance, and low error rates, such as automotive electronics, medical devices, industrial control systems, and security systems. Its SLC NAND architecture, coupled with superior endurance and faster data access, makes it the preferred choice for mission-critical systems where data integrity and long-term reliability are essential.
On the other hand, the TC58CYG0S3HRAIJ is more suitable for consumer-grade applications or systems that do not demand the highest levels of endurance, performance, or data integrity. It is a more cost-effective solution for general storage needs but is not recommended for high-reliability applications.
In summary, the GD5F1GQ5REYIGR offers several advantages over the TC58CYG0S3HRAIJ, including:
Higher endurance, with up to 100,000 P/E cycles compared to the 3,000–5,000 P/E cycles of the TC58CYG0S3HRAIJ.
Faster read and write speeds, ensuring high-speed performance for data-intensive applications.
Superior data integrity and lower error rates due to SLC NAND architecture.
Wider operating temperature range, making it suitable for harsh environmental conditions.
Optimized power consumption for energy-efficient applications, especially in battery-powered systems.
The GD5F1GQ5REYIGR is the superior choice for high-performance, high-reliability, and long-term applications, while the TC58CYG0S3HRAIJ is more appropriate for consumer-grade products where cost efficiency is prioritized over endurance and performance.
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