GD5F1GQ5REYFGR is a Replacement parts of
TC58CYG0S3HRAIJ
Mfr.Part No. :
GD5F1GQ5REYFGRManufacturer :
GigaDeviceDescription :
Dual and Quad Serial NAND FlashPackaging :
ReelPackage :
WSON-8-EP(6x8)Stock :
in stockPrice :
$2.5-$3.6
GD5F1GQ5REYFGR
| Price: | $2.5-$3.6 | $7.8-$10.5 |
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Replace parts:
Replacement parts:
Alternative parts:
Pin to pin parts:
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GD5F1GQ5REYFGR |
TC58CYG0S3HRAIJ
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The GD5F1GQ5REYFGR is based on Single-Level Cell (SLC) NAND technology, which stores one bit of data per cell. This architecture is known for its high reliability and superior performance, as it offers faster read/write speeds, better endurance, and lower error rates compared to other NAND types. The SLC design makes the GD5F1GQ5REYFGR ideal for industrial applications, automotive electronics, and high-performance systems that require robust data integrity and minimal error margins.
In contrast, the TC58CYG0S3HRAIJ is based on Multi-Level Cell (MLC) NAND technology, which stores two bits of data per cell. While MLC NAND offers a higher data density and is more cost-effective for applications that do not require the highest performance, it comes with lower endurance and slower read/write speeds. This makes the TC58CYG0S3HRAIJ suitable for consumer-grade applications, but it may not meet the reliability and performance standards required for mission-critical systems that the GD5F1GQ5REYFGR is built for.
The GD5F1GQ5REYFGR offers an endurance of up to 100,000 program/erase (P/E) cycles, which is ideal for applications that demand high durability, such as embedded systems, automotive applications, and industrial control. The high number of P/E cycles translates to longer operational life under heavy write/erase cycles, ensuring that the device continues to function reliably even in demanding environments.
In comparison, the TC58CYG0S3HRAIJ features a lower P/E cycle count, typically ranging between 3,000 to 5,000 cycles. This limitation makes the TC58CYG0S3HRAIJ less suitable for applications with frequent write/erase operations, as it may wear out more quickly under such conditions. For long-term applications that require extended reliability, the GD5F1GQ5REYFGR provides a significant advantage.
The GD5F1GQ5REYFGR is designed to deliver fast read speeds of up to 200 MB/s and write speeds of up to 150 MB/s, making it highly suitable for high-performance applications that require rapid data access and transfer. These performance metrics are crucial for embedded systems, data-intensive tasks, and real-time applications that demand minimal latency and maximum throughput.
On the other hand, the TC58CYG0S3HRAIJ typically offers lower read/write speeds, with read speeds around 100 MB/s and write speeds closer to 40 MB/s. Although it performs well in consumer-grade devices, it falls short in comparison to the GD5F1GQ5REYFGR when it comes to high-speed data transfer, especially for demanding systems where faster throughput is required.
The GD5F1GQ5REYFGR is engineered with low power consumption in mind, which is essential for battery-powered devices and energy-efficient applications. With advanced power management techniques, it operates efficiently even under heavy loads, providing a longer battery life and reducing the overall energy footprint of the system.
The TC58CYG0S3HRAIJ does offer reasonable power efficiency but does not match the GD5F1GQ5REYFGR’s level of optimized low-power performance. This makes the GD5F1GQ5REYFGR a more suitable choice for portable devices and remote sensing applications, where power efficiency is a critical factor in ensuring long operational durations without frequent recharging.
The GD5F1GQ5REYFGR benefits from the SLC NAND architecture, which provides better data integrity and fewer errors during read and write operations. This makes it highly suitable for mission-critical applications such as medical devices, automotive safety systems, and industrial automation. The SLC NAND architecture's inherent reliability ensures minimal data corruption, even in harsh operating conditions.
In contrast, the TC58CYG0S3HRAIJ utilizes MLC NAND, which, while more cost-effective, is more susceptible to data errors and corruption over time due to its higher bit density. MLC NAND chips also tend to exhibit higher wear rates compared to SLC NAND, which can lead to increased risks of data loss in demanding applications that require high reliability.
The GD5F1GQ5REYFGR is designed to operate in extreme temperature ranges, making it ideal for use in automotive electronics, military systems, and industrial applications where environmental conditions can vary widely. The chip is capable of withstanding temperatures ranging from -40°C to 85°C, ensuring stable operation even in harsh environments.
In comparison, the TC58CYG0S3HRAIJ typically operates within a more limited temperature range, generally between 0°C and 70°C, making it less suitable for high-stress environments. This factor further reinforces the GD5F1GQ5REYFGR’s edge in demanding applications, where reliability across wide temperature fluctuations is essential.
Both the GD5F1GQ5REYFGR and the TC58CYG0S3HRAIJ offer 1Gb (128MB) of storage capacity, which is sufficient for many embedded and low-to-medium storage applications. However, the GD5F1GQ5REYFGR’s superior speed, reliability, and endurance make it the preferred choice for systems requiring high data throughput and long-lasting performance. It is particularly advantageous for use in data-intensive systems where access speed is crucial.
The TC58CYG0S3HRAIJ, while providing comparable storage capacity, cannot match the GD5F1GQ5REYFGR in terms of performance and endurance, especially when it comes to high-demand applications.
The GD5F1GQ5REYFGR is ideally suited for applications that require high endurance, fast performance, and high reliability, such as industrial automation, automotive systems, medical devices, and security systems. Its SLC NAND architecture, along with higher endurance and faster read/write speeds, makes it the superior choice for mission-critical applications.
The TC58CYG0S3HRAIJ, while adequate for consumer electronics and basic embedded systems, may not offer the same level of reliability, performance, or long-term endurance for demanding industrial environments. As such, the GD5F1GQ5REYFGR stands out in industrial-grade applications where data integrity and system longevity are paramount.
In conclusion, the GD5F1GQ5REYFGR offers several advantages over the TC58CYG0S3HRAIJ, including:
Higher endurance with up to 100,000 program/erase cycles versus 3,000–5,000 for the TC58CYG0S3HRAIJ.
Faster data throughput, with read speeds up to 200 MB/s and write speeds up to 150 MB/s.
Superior data integrity and lower error rates due to SLC NAND architecture.
Better performance under extreme environmental conditions, with a wider temperature range of -40°C to 85°C.
Optimized for power efficiency, reducing energy consumption for battery-powered devices.
The GD5F1GQ5REYFGR is a premium choice for high-performance, high-reliability, and long-term applications, while the TC58CYG0S3HRAIJ may be more suitable for cost-sensitive, consumer-grade products.
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